MRC | Criteria | Characteristic |
---|---|---|
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT-DUAL GATE |
AXGY | MOUNTING METHOD | TERMINAL |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT AND 10.00 MILLIAMPERES MAXIMUM GATE 1 CURRENT AND 10.00 MILLIAMPERES MAXIMUM GATE 2 CURRENT |